Every Power Semiconductor Devices question asked in GPSC DEE Electrical, GPSC AE Electrical, Supervisor Instructor, GPSSB AAE Electrical — solve, check instantly, then read the formula and exam tip.
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B — Gate. A power MOSFET is a voltage-controlled device; the gate-source voltage switches it ON and OFF.
View answer & solutionD — N-channel enhancement-mode MOSFET. Among the listed device types, it combines normally-off gate control with the low conduction resistance commonly sought in efficient power switching.
View answer & solutionD — Three terminals, both carriers, current-controlled. A BJT has emitter, base and collector, conducts with both electrons and holes (bipolar) and is controlled by base current.
View answer & solutionPower MOSFETs are majority-carrier, voltage-controlled devices with fast switching and a positive temperature coefficient of on-resistance that assists current sharing in parallel. IGBTs combine MOS-gate drive with bipolar conduction and exhibit tail current at turn-off, making them attractive at higher voltage/power but usually lower switching frequency than MOSFETs.
Exam focus: High-frequency low/medium voltage → MOSFET; higher voltage/power → often IGBT. Common trap: Both MOSFET and IGBT are not current-controlled devices.
View answer & solutionA — It flows in reverse for a short time. Stored minority charge must be swept out, so the diode conducts a brief reverse current before it blocks (t_rr).
View answer & solutionGaN wide-bandgap devices can switch at high frequency with low switching/conduction losses, enabling higher-efficiency and much smaller power converters than many conventional silicon implementations.
