Correct AnswerB. Higher efficiency and smaller size for power converters
Quick Explanation
GaN wide-bandgap devices can switch at high frequency with low switching/conduction losses, enabling higher-efficiency and much smaller power converters than many conventional silicon implementations.
Detailed Explanation
Concept & Reasoning
Wide bandgap gives high critical electric field and supports high-voltage operation with thinner active regions; GaN also offers fast switching and low charge/capacitance in suitable devices. Higher switching frequency can shrink inductors, transformers and capacitors, raising power density. Cost/manufacturing are not universally lower/easier than silicon.
How to Solve It in the Exam
GaN/SiC → efficiency + high frequency + power density.
Important Exam PointHigh-frequency capability only helps if layout, magnetics, EMI and thermal design are also engineered correctly.
Related Revision Path
This question sits in the revision path Power Electronics → Semiconductor Devices → Wide-Bandgap Devices .
